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kr PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.
5 Cycle Read Latency) with ODT Features ■ Configurations With Read Cycle Latency of 2.
5 cycles: CY7C2561KV18 – 8M x 8 CY7C2576KV18 – 8M x 9 CY7C2563KV18 – 4M x 18 CY7C2565KV18 – 2M x 36 Separate independent read and write data ports ❐ Supports concurrent transactions 550 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.
5 clock cycle latency Two input clocks (K and K) for precise DDR timing ❐ SRAM uses risin...

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