Part Number
|
SI2324DS |
Manufacturer
|
Vishay Siliconix |
Description
|
N-Channel MOSFET |
Published
|
Jan 15, 2012 |
Detailed Description
|
www.DataSheet.co.kr
SPICE Device Model Si2324DS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
DESCRIPTION
The attached...
|
Datasheet
|
SI2324DS
|
Overview
www.
DataSheet.
co.
kr
SPICE Device Model Si2324DS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data...
Similar Datasheet