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kr Si5441BDC New Product Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
045 @ VGS = −4.
5 V −20 0.
052 @ VGS = −3.
6 V 0.
080 @ VGS = −2.
5 V FEATURES ID (A) −6.
1 −5.
7 −4.
6 11.
5 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BK XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage ...

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