2SC2735

2SC2731 : .

2SC2732 : 2SC2732 Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 — — 30 700 — — Typ — — — — — 60 1000 0.5 7.0 Max — — — 0.5 5 — — 0.8 — MHz pF dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I .

2SC2732 : SMD Type Silicon NPN Epitaxial 2SC2732 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 UHF frequency converter 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 25 4 20 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown vo.

2SC2732 : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features 。 High frequency. / Applications 。 UHF frequency converter. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Range Marking 30～200 HEC http://www.fsbrec.com 1/6 2SC2732 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rating 30 25 4.0 20 150 150 -55～150 Unit V V V mA mW ℃ ℃ / Electrical Charac.

2SC2734 : 2SC2734 Silicon NPN Epitaxial Application • UHF frequency converter • Local oscillator, wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 11 3 — — 20 1.4 — — Typ — — — — — 90 3.5 0.9 15 Max — — — 0.5 0.7 200 — 1.5 — GHz pF dB Unit V V V µA V Test condition.

2SC2734 : 2SC2734 Silicon NPN Epitaxial REJ03G0705-0200 (Previous ADE-208-1074) Rev.2.00 Aug.10.2005 Application • UHF frequency converter • Local oscillator, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “GC”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 Free Datasheet http://www.datasheet4u.com/ 2SC2734 Electr.

2SC2734 : SMD Type Silicon NPN Epitaxial 2SC2734 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 UHF frequency converter +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 20 11 3 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown volt.

2SC2734 : ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor .

2SC2734 : .

2SC2735 : 2SC2735 Silicon NPN Epitaxial REJ03G0706-0200 (Previous ADE-208-1075) Rev.2.00 Aug.10.2005 Application UHF/VHF Local oscillator, frequency converter Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “JC”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 Free Datasheet http://www.datasheet4u.com/ 2SC2735 Electrical Characteristics.

2SC2735 : SMD Type Silicon NPN Epitaxial 2SC2735 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff c.

2SC2735 : ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconduc.

2SC2736 : 2SC2736 Silicon NPN Epitaxial Application • UHF/VHF frequency converter • Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 — — 30 — 1400 — Typ — — — — — — — 2200 22.5 Max — — — 500 0.7 200 1.0 — — pF MHz dB Unit V V V nA V Test conditions I C = 10 µA, I.

2SC2736 : SMD Type Silicon NPN Epitaxial 2SC2736 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff c.

2SC2736 : ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconduc.

2SC2736 : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features 。 High fT. / Applications 、,。 UHF/VHF frequency converter, local oscillator. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Range Marking 30～200 HTC http://www.fsbrec.com 1/6 2SC2736 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rating 30 20 3.0 50 150 150 -55～150 Unit V V V mA mW ℃ ℃ / .