www.
DataSheet.
co.
kr
SVD5N60AT/SVD5N60AF
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD5N60AT/F is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 5A,600V,RDS(on) typ =2.
0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/...