|
Part Number
|
TSHG5210 |
|
Manufacturer
|
Vishay Siliconix |
|
Description
|
High Speed Infrared Emitting Diode |
|
Published
|
Feb 2, 2012 |
|
Detailed Description
|
www.vishay.com
TSHG5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 839...
|
|
Datasheet
|
TSHG5210
|
Overview
www.
vishay.
com
TSHG5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 8390
DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5
• Leads with stand-off • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz • Good spectral matching with CMOS cameras
• Com...
Similar Datasheet