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Part Number
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IXFH76N06-12 |
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Manufacturer
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IXYS Corporation |
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Description
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Power MOSFET |
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Published
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Feb 5, 2012 |
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Detailed Description
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www.DataSheet.co.kr
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH ...
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Datasheet
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IXFH76N06-12
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Overview
www.
DataSheet.
co.
kr
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V
ID25 76 A 76 A 76 A 76 A
RDS(on) 11 mW 12 mW 11 mW 12 mW
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 10 kW Continuous Transient TC TC TC TC = 25°C (Chip capability = 125 A) = 119°C, limited by external leads = 25°C, pulse width limited by TJM = 25°C N06 N07 N06 N07
Maximum Ratings 60 70 60 70 ±20 ±30 76 76 304 100 30 2 5 360 -55 .
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+175 175 -55 .
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+150 V V V V ...
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