Part Number
|
IXFH7N80 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 5, 2012 |
Detailed Description
|
www.DataSheet.co.kr
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80...
|
Datasheet
|
IXFH7N80
|
Overview
www.
DataSheet.
co.
kr
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A
RDS(on) = 1.
4 W trr = 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 7 28 7 18 5 180 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ V/ns
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G
W °C °C °C °C Nm/lb.
in.
G = Gate, S = Source,
D = Dr...
Similar Datasheet