Part Number
|
IXFH7N90Q |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 5, 2012 |
Detailed Description
|
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
IXFH 7...
|
Datasheet
|
IXFH7N90Q
|
Overview
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
IXFH 7N90Q IXFT 7N90Q
VDSS ID25 RDS(on)
= 900 V = 7A = 1.
5 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
900
V
900
V
±20
V
±30
V
7
A
28
A
7
A
20
mJ
700
mJ
5
V/ns
...
Similar Datasheet