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New Product
VSSB410S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier
Schottky Rectifier
FEATURES
• Low profile package
TMBS
®
• Ideal for automated placement • Trench MOS
Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in
DO-214AA (SMB)
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 4.
0 A TJ max.
4.
0 A 100 V 80 A 50 mJ 0.
61 V 150 °C
For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection application...