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IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO 252) ID 100 8.
2 80 V mΩ A
• Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 * Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
Package Marking
PG-TO220-3 086N10N
PG-TO262-3 086N10N
PG-TO263-3 083N10N
PG-TO252-3 082N10N
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