Part Number
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IXFB60N80P |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 22, 2012 |
Detailed Description
|
www.DataSheet.co.kr
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IX...
|
Datasheet
|
IXFB60N80P
|
Overview
www.
DataSheet.
co.
kr
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 60N80P
VDSS = 800 V ID25 = 60 A RDS(on) ≤ 140 mΩ ≤ 250 ns trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C
Maximum Ratings 800 800 ±30 ±40 60 150 30 100 5 20 1250 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb g
PLUS264TM (IXFB)
G
(TAB) D S
G = Gate S...
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