Part Number
|
IXFH18N100Q3 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 22, 2012 |
Detailed Description
|
www.DataSheet.co.kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanc...
|
Datasheet
|
IXFH18N100Q3
|
Overview
www.
DataSheet.
co.
kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT18N100Q3 IXFH18N100Q3
VDSS ID25
RDS(on)
= 1000V = 18A ≤ 660mΩ
TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g g
z z z z z
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 18 60 18 1.
5 50 830 -55 .
.
.
+150 150 -55 .
.
.
+150 TO-247 (IXFH)
G
...
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