TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC3266
Power Amplifier Applications Power Switching Applications
2SC3266
Unit: mm
· Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A) · Complementary to 2SA1296
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
20 20 6 2 0.
5 750 150 -55~150
Unit
V V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-...