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LF PA K
PSMN8R0-30YL
N-channel 8.
3 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev.
2 — 16 May 2011 Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
1.
2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.
3 Applications
Class-D amplifiers DC-to-DC converters Motor control Server power supplies
1.
4 Quick reference data
Table 1...