Part Number
|
SW4N60V |
Manufacturer
|
Samwin |
Description
|
N-Channel MOSFET |
Published
|
Mar 5, 2012 |
Detailed Description
|
www.DataSheet.co.kr
SAMWIN
SW4N60V
N-channel MOSFET
BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm
1 2 2
Features
■ High rug...
|
Datasheet
|
SW4N60V
|
Overview
www.
DataSheet.
co.
kr
SAMWIN
SW4N60V
N-channel MOSFET
BVDSS : 600V ID : 4.
0A RDS(ON) : 2.
5ohm
1 2 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.
5 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-251
3 1
1.
Gate 2.
Drain 3.
Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
3
Order Codes
Item 1 Sales Type SW I 4...
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