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SAMWIN
SW100N03
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 5.
3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1
TO-220 TO-251
TO-252 TO-263
BVDSS : 30V ID : 100A RDS(ON) : 5.
3 mΩ
1 2 3
2
3
1
2
1 3
2
2 3 1 3
1.
Gate 2.
Drain 3.
Source
General Description
This N-channel enhancement mode field-effect power
transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
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