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SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.
1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
BVDSS : 100V ID : 17A RDS(ON) : 0.
1 ohm
1 1 2 3
2 3 2
1.
Gate 2.
Drain 3.
Source
1
General Description This N-channel enhancement mode field-effect power
transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
3
Order Codes
Item 1 2 Sales Type SW P 19N10 SW D...