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N-Channel Enhancement Mode Field Effect
Transistor FEATURES
60V, 0.
3A, RDS(ON) = 6 Ω @VGS = 10V.
RDS(ON) = 6 Ω @VGS = 5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92 package.
CEK7002A
PRELIMINARY
D
G
G D S
TO-92
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 60 Units V V A A W C
±20
0.
3 1.
2 1.
5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol ...