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P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-20V, -6A, RDS(ON) = 44mΩ @VGS = -4.
5V.
RDS(ON) = 65mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8
CEM2401
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-6 -20 2.
5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Para...