Ordering number:EN2544B
NPN Epitaxial Planar Type Silicon
Transistor
2SC3820
High hFE, AF Amplifier Applications
Applications
· Drivers, muting circuits.
Features
· Adoption of FBET and MBIT processes.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
· Small Cob (Cob=2.
0pF typ).
Package Dimensions
unit:mm 2033
[2SC3820]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
E...