2SC3856

2SC3850 : ·With TO-3PN package ·Good linearity of hFE ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 125 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 20 30 6 2.5 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Pro.

2SC3850 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·High Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Tempera.

2SC3851 : 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 V IC 4 A IB 1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB= VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) 12 6 2 10 –5 200 IB2 (mA) –200 (Ta=25°C) Ra.

2SC3851 : ·With TO-220F package ·Complement to type 2SA1488/1488A APPLICATIONS ·Audio and PPC high voltage power supply ,and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC3851 VCBO Collector-base voltage 2SC3851A 2SC3851 VCEO Collector-emitter voltage 2SC3851A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 6 4 1 25 150 -55~150 V A A W Open emitter 100 60 V CONDITIONS VALUE 80 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon .

2SC3851 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A ·Complement to Type 2SA1488 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3851 isc website：www.iscsemi.com 1 isc & isc.

2SC3851A : 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 V IC 4 A IB 1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB= VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) 12 6 2 10 –5 200 IB2 (mA) –200 (Ta=25°C) Ra.

2SC3851A : ·With TO-220F package ·Complement to type 2SA1488/1488A APPLICATIONS ·Audio and PPC high voltage power supply ,and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC3851 VCBO Collector-base voltage 2SC3851A 2SC3851 VCEO Collector-emitter voltage 2SC3851A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 6 4 1 25 150 -55~150 V A A W Open emitter 100 60 V CONDITIONS VALUE 80 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon .

2SC3851A : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A ·Complement to Type 2SA1488A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1 A 25 W 150 ℃ -55~150 ℃ isc website：www.iscsemi..

2SC3852 : 2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 V IC 3 A IB 1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) 20 20 1.0 10 –5 15 IB2 (mA) –30 Application : Driver for Solenoid and Motor, Series Regulator and General Purpose (Ta=25°C) .

2SC3852 : TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,。 High hFE, low VCE(sat). / Applications ，。 Driver for solenoid and motor, series regulator and general purpose. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。 See Marking Instructions. http://www.fsbrec.com 1/6 2SC3852 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PC(Tc=25℃) Tj Tstg DA.

2SC3852 : ·With TO-220Fa package ·Low collector saturation voltage ·High hFE APPLICATIONS ·Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 80 60 6 3 1 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Powe.

2SC3852 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3852 isc website：www.iscsemi.com 1 isc .

2SC3852A : 2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 V IC 3 A IB 1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) 20 20 1.0 10 –5 15 IB2 (mA) –30 Application : Driver for Solenoid and Motor, Series Regulator and General Purpose (Ta=25°C) .

2SC3852A : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3852A isc website：www.iscsemi.com 1 is.

2SC3853 : TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ，。 Low Saturation Voltage, Excellent DC current characteristics. / Applications 。 Applications for pillow distortion adjustment for Color TV and low voltage adjustment. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 60～120 Y 100～200 GR 150～300 http://www.fsbrec.com 1/6 2SC3853 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Collector Powe.

2SC3853 : .

2SC3853 : ·With TO-3PN package ·Complement to type 2SA1489 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 80 6 6 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PA.