VBT1545CBP
www.
vishay.
com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.
41 V at IF = 5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS
Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per LF maximum peak of 245 °C
2
K
J-STD-020,
• TJ 200 °C max.
in solar bypass mode application • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
1 VBT1545CBP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACT...