DAN222M Switching Diode (High speed switching) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA ●Features High reliability Small mold type High Speed switching ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 ●Application High speed switching ●Structure Epitaxial planar ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Power dissipation * 　 　 　 PD Junction temperature Storage temperature Tj Tstg *2 elements total ●Characteristics (Ta = 25ºC) Parameter Symbol ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)