Preliminary Datasheet RJK1051DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting R07DS0082EJ0102 (Previous: REJ03G1768-0101) Rev.
1.
02 Jul 30, 2010  Low on-resistance RDS(on) = 30 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Application  Switching Mode Power Supply www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche ...

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