Preliminary Datasheet RJK1054DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ.
(at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.
2.
00 Aug 17, 2010  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Stor...

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