Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.
5 V gate drive  Low on-resistance RDS(on) = 0.
043  typ.
(at ID = 10 A, VGS = 4 V, Ta = 25C)  Low leakage current  High speed switching R07DS0270EJ0100 Rev.
1.
00 Mar 07, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to ca...

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