RJK4515DPK Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.
171 Ω typ.
(at ID = 13.
5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching REJ03G1869-0100 Rev.
1.
00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storag...

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