Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.
4  typ.
(at ID = 1.
5 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0417EJ0200 Rev.
2.
00 Feb 24, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.
DataSheet.
co.
kr (Ta = 25C) Value 500 30 3 12 3 40.
3 3.
1 150 –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes:...

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