Preliminary Datasheet RJK6025DPD 600V - 1A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.
5  typ.
(at ID = 0.
5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0676EJ0100 Rev.
1.
00 Feb 17, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.
DataSheet.
co.
kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes:...

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