Part Number
|
RJP30E2DPP-M0 |
Manufacturer
|
Renesas |
Description
|
N-Channel Power MOSFET |
Published
|
May 2, 2012 |
Detailed Description
|
Preliminary Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate te...
|
Datasheet
|
RJP30E2DPP-M0
|
Overview
Preliminary Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.
2.
00 Apr 12, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1.
Gate 2.
Collector 3.
Emitter
1
2 3
E
www.
DataSheet.
co.
kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Stor...
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