Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.
2.
00 Apr 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 μs, d...

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