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Part Number
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RJP60V0DPM |
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Manufacturer
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Renesas |
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Description
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N-Channel IGBT |
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Published
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May 2, 2012 |
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Detailed Description
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Preliminary Datasheet
RJP60V0DPM
600V - 22A - IGBT Application: Inverter
Features
High breakdown-voltage Low Collec...
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Datasheet
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RJP60V0DPM
|
Overview
Preliminary Datasheet
RJP60V0DPM
600V - 22A - IGBT Application: Inverter
Features
High breakdown-voltage Low Collector to Emitter saturation Voltage VCE(sat) = 1.
5 V typ.
(at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 s typ.
) Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.
1.
00 Feb 07, 2012
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
C
G
1.
Gate 2.
Collector 3.
Emitter
E 1 2
3
www.
DataSheet.
co.
kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to...
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