Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.
9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ.
Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.
2.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case therm...

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