FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.
5dB(typ.
) at Pout=43dBm(Avg.
) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers.
This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers.
This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source ...

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