2SC4274

2SC4270 : Ordering number:EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features · Small noise figure : NF=3.0dB typ (f=0.9GHz) · High power gain : PG=12dB typ (f=0.9GHz) · High cutoff frequency : fT=3.0GHz typ Package Dimensions unit:mm 2018B [2SC4270] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions .

2SC4271 : Ordering number:EN2710A Applications · Wide-band amplifiers. · High frequency drivers. Features · High fT (fT=2.2GHz typ) · High current (IC=300mA) · Adoption of FBET process. NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2009B [2SC7271] JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Para.

2SC4272 : Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SC4272] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 1 3.0 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCER VCEO VEBO IC ICP PC Tj Tstg R.

2SC4272 : NPN Epitaxial Planar Silicon Transistor FEATURES  Small size making it easy to provide high-density,small-sized hybrid IC′s. Pb Lead-free Production specification 2SC4272 ORDERING INFORMATION Type No. Marking 2SC4272 CH SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICP PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current(Pulse) Collector Dissipation Junction and Storage Temperature 75 45 5 1.0 1.5 1.3 -55 to +150 Units V V V A A W ℃ E054 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Planar Silicon Transisto.

2SC4272 : SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features 。 Small size making it easy to provide high-density. / Applications  27MHzCB 。 27MHz CB transceiver driver applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking D 60～120 ￭HCHD ** ** ** PIN 3：Emitter E 100～200 ￭HCHE F 160～320 ￭HCHF http://www.fsbrec.com 1/6 2SC4272 Rev.F Jul.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Po.

2SC4272 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4272 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Large Current Capacity 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 75 45 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collect.

2SC4272 : Plastic-Encapsulate Transistors FEATURES • Small size making it easy to provide high-density,small-sized hybrid IC s. Marking: CH Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 75 VCEO 45 VEBO 5 IC 1 PC 0.5 TJ 150 Tstg -55to +150 Unit V V V A W 2SC4272 (NPN) 1. BASE 2. COLLECTO 3. EMITTER SOT-89 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Co.

2SC4272 : SMD Type Transistors 27MHz CB Transceiver Driver Applications 2SC4272 Features Small Size Making It Easy To Provide High-Density, Small-Sized Hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating 75 45 5 1.0 1.5 1.3 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Vo.

2SC4272 : SMD Type NPN Transistors 2SC4272 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=45V ● Small Size Making It Easy To Provide High-Density, To Provide High-Density, ● 27MHz CB Transceiver Driver Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 75 45 5 1 1.5 1.3 150 -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = .

2SC4272-HF : SMD Type NPN Transistors 2SC4272-HF Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=45V ● Small Size Making It Easy To Provide High-Density, To Provide High-Density, ● 27MHz CB Transceiver Driver Applications ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating .

2SC4273 : ·With TO-220C package · High voltage,high speed · Low saturation voltage · High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4273 Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 5 2 40 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resista.

2SC4273 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base voltage 10 IC Collector Current-Continuous 5 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -5.

2SC4274 : ·With TO-220C package ·High voltage,high speed ·Low saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 10 3 40 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junctio.

2SC4274 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base voltage 10 IC Collector Current-Continuous 10 IB Base Current-Continuous 3 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V .

2SC4275 : ·With TO-3PN package ·High voltage ,high speed ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 10 3 80 150 -55~150 UNIT V V V A A W THERMAL CH.

2SC4275 : ·Low saturation voltage ·High Switching Speed ·High reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High speed DC-DC converter applications ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4275 isc we.