Analog Power AM5430N N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package Typical Applications: • Portable Computing Power Conversion • Portable Entertainment and GPS Power Conversion PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.
5V VDS (V) 30 ID(A) 10 8.
5 DFN3x2-8L EP D D D D G S S S ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C 10 ID Continuous Drain Current a TA=70°C 7.
5 IDM Pulsed Drain Current b 30 a I 4.
4 Continuous Source Current (Diode Conduction) S T =25°C 3.
...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)