Part Number
|
RJL6014DPP |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel MOS FET |
Published
|
Jun 28, 2012 |
Detailed Description
|
Preliminary Datasheet
RJL6014DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery...
|
Datasheet
|
RJL6014DPP
|
Overview
Preliminary Datasheet
RJL6014DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode trr = 180 ns typ.
(at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C) Low on-resistance RDS(on) = 0.
52 typ.
(at ID = 7.
5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.
2.
00 Mar 01, 2011
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1.
Gate 2.
Drain 3.
Source
1
2 3
S
www.
DataSheet.
net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain d...
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