Product Data Sheet
December 16, 2002
DC - 10.
5 GHz Discrete HFET
TGF4250-SCC
Key Features and Performance
• • • • • • • • • • Nominal Pout of 34 dBm at 8.
5 GHz Nominal Gain of 8.
5 dB at 8.
5 GHz Nominal PAE of 53% at 8.
5 GHz Suitable for high reliability applications 4800 µm x 0.
5 µm FET Chip dimensions: 0.
61 x 1.
37 x 0.
1 mm (0.
024 x 0.
054 x 0.
004 in) Bias at 8 Volts, 384 mA Cellular Base Stations High-reliability space Military
Primary Applications
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Description
The TriQuint TGF4250-SCC is a single gate 4.
8 mm discrete GaAs Heterostructure Field Effect
Transistor (HFET) designed for high efficiency power applications up to 10.
5 GHz in Class A and Class AB operation.
Typ...