Product Data Sheet
March 31, 2003
9.
6 mm Discrete HFET
TGF4260-SCC
Key Features and Performance
• • • • • • • 9600 µm x 0.
5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.
5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.
5 GHz Suitable for high reliability applications 0.
6 x 2.
4 x 0.
1 mm (0.
024 x 0.
093 x 0.
004 in)
Primary Applications
• • • Cellular Base Stations High-reliability space Military
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Description
The TriQuint TGF4260-SCC is a single gate 9.
6 mm discrete GaAs Heterostructure Field Effect
Transistor (HFET) designed for high efficiency power applications up to 10.
5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 3...