PMZB670UPE
83B
20 V, single P-channel Trench MOSFET
Rev.
3 — 23 March 2012 Product data sheet
1.
Product profile
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1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
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2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.
37 mm
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3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source...