MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
25.
0+/-0.
3 7.
0+/-0.
5 11.
0+/-0.
3
1
Silicon MOSFET Power
Transistor 30MHz,70W DESCRIPTION
RD70HHF1 is a MOS FET type
transistor specifically designed for HF High power amplifiers applications.
OUTLINE DRAWING
4-C2
24.
0+/-0.
6
•High power and High Gain: Pout70W, Gp13dB @Vdd=12.
5V,f=30MHz •High Efficiency: 60%typ.
on HF Band
2
10.
0+/-0.
3
FEATURES
9.
6+/-0.
3
0.
1 -0.
01
3
+0.
05
R1.
6+/-0.
15 4.
5+/-0.
7 6.
2+/-0.
7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.
0+/-0.
3
18.
5+/-0.
3
PIN 1.
DRAIN 2.
SOURCE 3.
GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS...