Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0175EJ0300 Rev.
3.
00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1.
Gate 2.
Collector 3.
Emitter E www.
DataSheet.
net/ 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / dio...

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