Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
4 V typ.
(IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 92 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.
2.
00 Dec 01, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E www.
DataSheet.
net/ 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector ...

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