Part Number
|
RJH1BF7RDPQ-80 |
Manufacturer
|
Renesas |
Description
|
High Speed Power Switching |
Published
|
Jul 20, 2012 |
Detailed Description
|
Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonan...
|
Datasheet
|
RJH1BF7RDPQ-80
|
Overview
Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 35 A, VGE = 15V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating R07DS0394EJ0100 Rev.
1.
00 May 16, 2011
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector
E
1 2
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc...
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