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Part Number
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RJH1CF5RDPQ-80 |
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Manufacturer
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Renesas |
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Description
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High Speed Power Switching |
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Published
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Jul 20, 2012 |
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Detailed Description
|
Preliminary Datasheet
RJH1CF5RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circu...
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|
Datasheet
|
RJH1CF5RDPQ-80
|
Overview
Preliminary Datasheet
RJH1CF5RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.
95 V typ.
(at IC = 25 A, VGE = 15V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating • • • • R07DS0355EJ0100 Rev.
1.
00 May 12, 2011
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector
E
1 2
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current T...
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