Part Number
|
RJH60M6DPQ-A0 |
Manufacturer
|
Renesas |
Description
|
IGBT |
Published
|
Jul 20, 2012 |
Detailed Description
|
Preliminary Datasheet
RJH60M6DPQ-A0
600 V - 40 A - IGBT Application: Inverter
Features
Short circuit withstand time (...
|
Datasheet
|
RJH60M6DPQ-A0
|
Overview
Preliminary Datasheet
RJH60M6DPQ-A0
600 V - 40 A - IGBT Application: Inverter
Features
Short circuit withstand time (8 s typ.
) Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.
) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0537EJ0100 Rev.
1.
00 Sep 02, 2011
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector
E
1 2
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to em...
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