Preliminary Datasheet RJH1CV7DPK 1200V - 35A - IGBT Application: Inverter R07DS0748EJ0300 Rev.
3.
00 Feb 14, 2013 Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 35 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 280 ns typ.
(at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 C 12 3 1.
Gate 2.
Collector G 3.
Emitter 4.
Collector E Absolute Maximum Ratings Item Collector to emitter voltage / diode revers...

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