Part Number | RJH60F5BDPQ-A0 |
Manufacturer | Renesas |
Title | IGBT |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ... |
Features |
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive ... |
File Size | 159.19KB |
Datasheet |
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