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RJH60F5BDPQ-A0


Part Number RJH60F5BDPQ-A0
Manufacturer Renesas
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
Features
 Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive ...

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