Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
35 V typ.
(at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0632EJ0100 Rev.
1.
00 Feb 17, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector curre...

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